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Infineon and Wemax strengthen cooperation to provide energy-saving and economical fast charging services for electric vehicles
【Lansheng Technology News】Infineon Technologies AG's new CoolSiC™ hybrid discrete devices feature TRENCHSTOP™ 5 fast-switching IGBTs and CoolSiC Schottky diodes. Shenzhen Wemax New Energy Co., Ltd. uses this device for its next-generation 6.6 kW OBC/DCDC vehicle charger. Infineon's components, available in D²PAK packages, combine ultra-fast TRENCHSTOP 5 IGBTs with silicon carbide (SiC) Schottky barrier diodes, offering a perfect price-performance ratio in hard-switching and soft-switching topologies. With its excellent performance, optimized power density and leading quality, this power semiconductor device is highly compatible with Vimax's on-board charger.
Xu Jinzhu, product line director and chief engineer of Wemax’s R&D department, said: “We are very pleased to choose Infineon’s CoolSiC Hybrid device for our next-generation OBC to achieve higher reliability, stability, performance and power density. This deepens our cooperative relationship with Infineon, and through close collaboration, we promote technological application innovation and jointly promote the vigorous development of new energy vehicles."
Robert Hermann, Vice President of the Automotive High Voltage Chip and Discrete Devices Product Line at Infineon Technologies, said: "We are pleased to strengthen our cooperation with VMAX with highly efficient hybrid products. Together we will continue to promote the development of electric vehicles and meet the needs of high-efficiency solutions." Industry requirements for performance, quality and system cost.”
This hybrid discrete device uses a fast hard-switching TRENCHSTOP 5 650 V IGBT co-packaged with a zero-reverse-recovery CoolSiC Schottky diode, resulting in extremely low switching losses at switching speeds in excess of 50 kHz. This makes the device an excellent choice for high-power electric vehicle charging systems. In addition, the rugged 5th generation CoolSiC Schottky diodes offer greater surge current resistance, maximizing reliability. Diffusion welding of this SiC diode improves the thermal resistance (Rth) of the package, allowing for smaller die size, thereby increasing power switching capabilities. With these features, the product achieves greater system reliability and service life, meeting the stringent requirements of the automotive industry. To maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.
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Samsung releases its first 36GB HBM3E 12H DRAM to meet higher requirements in the artificial intelligence era
【Lansheng Technology News】Samsung Electronics announced today that the company successfully released its first 12-layer stacked HBM3E DRAM - HBM3E 12H, which is Samsung's largest HBM product to date.
Samsung HBM3E 12H supports all-weather maximum bandwidth up to 1280GB/s, and the product capacity also reaches 36GB. Compared with Samsung's 8-layer stacked HBM3 8H, HBM3E 12H has significantly increased bandwidth and capacity by more than 50%.
"Artificial intelligence service providers in the current industry increasingly require higher-capacity HBMs, and our new product HBM3E 12H is designed to meet this demand," said Yongcheol Bae, executive vice president of the Memory Product Planning Team at Samsung Electronics , “This new storage solution is part of our efforts to develop multi-layer stacked HBM core technology and provide technology leadership for the high-capacity HBM market in the era of artificial intelligence.
HBM3E 12H uses advanced hot-pressed non-conductive film (TC NCF) technology to keep the height of 12-layer and 8-layer stack products consistent to meet current HBM packaging requirements. This technology will bring even more benefits at higher stacks as the industry looks to alleviate chip bending issues caused by wafers. Samsung has been working to reduce the thickness of its non-conductive film (NCF) material and minimize the gap between chips to 7 micrometers (µm) while eliminating gaps between layers. These efforts have increased the vertical density of its HBM3E 12H product by more than 20% compared to its HBM3 8H product.
Samsung's advanced thermally pressed non-conductive film (TC NCF) technology also improves HBM's thermal performance by allowing the use of bumps of different sizes between chips. During the chip bonding process, smaller bumps are used in signal transmission areas, while larger bumps are placed in areas that require heat dissipation. This approach helps improve product yield.
With the exponential growth of artificial intelligence applications, HBM3E 12H is expected to become the preferred solution for future systems to meet the system's demand for larger storage. With ultra-high performance and ultra-large capacity, HBM3E 12H will help customers manage resources more flexibly while reducing the total cost of ownership (TCO) of the data center. Compared with HBM3 8H, HBM3E 12H is equipped with artificial intelligence applications. It is expected that the average speed of artificial intelligence training can be increased by 34%, and the number of inference service users can also increase by more than 11.5 times [1].
Currently, Samsung has begun to provide HBM3E 12H samples to customers and is expected to begin mass production in the second half of this year.
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ROHM's EcoGaN™ is used in Delta Electronics' Innergie brand 45W output AC adapter "C4 Duo"
【Lansheng Technology News】ROHM Co., Ltd.'s 650V GaN device (EcoGaN™) is used in Delta Electronics, Inc. (hereinafter referred to as "Delta") Innergie brand 45W output AC adapter (fast charger) "C4 Duo" . Delta is a global provider of green solutions based on IoT technology. Innergie's AC adapter is equipped with ROHM's EcoGaN™ "GNP1150TCA" that improves power system efficiency, thereby improving product performance and reliability while also achieving miniaturization.
In the process of promoting a carbon-free society, since the power loss of equipment that handles high power is particularly significant, relevant manufacturers are taking measures to accelerate the pace of energy conservation. In addition, for power supplies, if the device can be operated at high frequency, it can not only save energy, but also achieve miniaturization of the circuit. Therefore, many products are equipped with GaN (gallium nitride) devices that can achieve high-speed switching. Manufacturers are on the agenda.
Rohm names devices using GaN under the "EcoGaN™" brand and is continuously expanding its product lineup. GaN has great potential, but it is difficult to handle. Rohm is currently promoting product development focusing on "ease of use" and providing related solutions. In terms of discrete products, Rohm has begun mass production of 150V GaN HEMTs in 2022, and will begin mass production of 650V that achieves the industry's ultra-high performance (RDS (ON) × Ciss / RDS (ON) × Coss) in 2023 Voltage-resistant GaN HEMT. This time, due to the built-in ESD protection element of the 650V withstand voltage product "GNP1150TCA-Z", its electrostatic withstand capability is approximately 75% higher than that of ordinary GaN HEMTs, which helps to improve the reliability of application products. In this regard The outstanding performance has been recognized by customers and has been applied to customers' products.
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Allegro MicroSystems Launches Bipolar Output Power-Thru IC, Expands Isolated Gate Driver Portfolio
【Lansheng Technology News】Allegro MicroSystems announces the second product in its high voltage power supply portfolio. Allegro's AHV85111 isolated gate driver IC adds important safety features while simplifying the design of high-power energy conversion systems in electric vehicles and clean energy applications.
The AHV85111 is based on Allegro's existing Power-Thru technology and is designed to meet designers' needs for a simple, streamlined and secure solution. The AHV85111 gate driver adds the critical capability of bipolar output, eliminating the need to design complex negative-isolated DC supplies and eliminating unnecessary external components, significantly reducing time to market. Allegro's latest Power-Thru solution also adds important safety features to withstand the effects of high operating temperatures in electric vehicle powertrain systems and is better able to handle solar microinverters, data center power supplies or electric vehicle on-board charging Noisy environments that may exist in applications such as processors.
The AHV85111 gate driver offers all the benefits of Allegro Power-Thru technology, including 10x lower common-mode capacitance, 50% smaller footprint, 10x lower noise, and 50% higher efficiency than the competition, while also providing over-temperature protection function, further improving the robustness of the system.
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Samsung Semiconductor lost 13 trillion won last year and increased its target to 11.5 trillion won this year
【Lansheng Technology News】On January 2, 2024, Samsung’s semiconductor division set an operating profit target of 11.5 trillion won in 2024. Last year, the unit lost 13 trillion won. According to Korean media reports, this high expectation is mainly affected by factors such as the price increase of DRAM and NAND Flash for three consecutive months.
Previously, the oversupply situation in the market had been alleviated as manufacturers cut production and reduced inventories. Currently, Samsung's semiconductor unit is mainly benefiting from the recovery of orders from smartphone and PC companies.
To achieve its operating profit target of 11.5 trillion won, Samsung's semiconductor division still needs to face market uncertainty and competitive pressure. As the global semiconductor market continues to change, Samsung's semiconductor department needs to continue to optimize its product structure and improve production efficiency to maintain competitive advantages and achieve sustainable development.
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Intel announces biggest architectural change in company's 40 years
【Lansheng Technology News】Intel unveiled a sweeping update to its processing architecture at its 2023 "AI Everywhere" event, reflected in its mobile Core Ultra processors and desktop Core Ultra processors due to be released in 2024. These architectures combine traditional high-performance CPU cores with specialized cores for low-power tasks, graphics acceleration, and AI acceleration. The latest fifth-generation Xeon CPUs, announced at the same event, focus on server performance and add co-processor cores for cloud AI acceleration.
According to Intel's corporate vision, the future of AI processing is both in the cloud and at the edge. The company predicts that by 2028, 80% of PCs will be "AI PCs" equipped with AI co-processors.
Intel turns to neural processing unit Intel's AI co-processor, called a neural processing unit (NPU), is its latest big innovation. When combined with other dedicated CPU cores, Intel believes the new processors will improve overall performance while reducing power consumption and lowering total cost of ownership (TCO).
The diverse architecture of these devices combines multiple specialized cores assembled in a chipset-based system. Chipsets enable higher yields by reducing the actual silicon area per processor and optimizing the silicon wafers used for each chipset. Like most AI accelerators, Intel's NPU relies heavily on multiply-accumulate (MAC) units. MAC speeds up complex multiplication operations by reducing the need to move data between memory and registers.
Intel released Xeon and mobile processors in late 2023, and plans to launch desktop PC processors using Intel 4 in 2024. Intel 4 process technology is a 7nm geometry process that Intel claims will increase clock speeds by 20% with the same power consumption compared to Intel 7 process (10nm). Core Ultra and fifth-generation Xeon are Intel's first 7nm processors and the first Core CPUs with smaller process geometries since 2019.
From Many Identical Cores to Targeted Dedicated Cores Traditional cloud AI processing uses graphics processing units (GPUs) and tensor processing units (TPUs) for massively parallel processing and matrix math optimization. As a result, Intel's mainstream CPUs have long included GPUs. In Intel's previous architecture, the main CPU core was responsible for handling all computing loads, regardless of the size of the computing load. This will cause low-load tasks to use more power than necessary and take CPU cycles from high-load processes. It also leaves specialized math-intensive processing to the main CPU cores, which are not optimized for specialized operations.
Intel's Xeon server processors and its Core mobile and desktop CPUs have historically relied on speed and optimized software as workarounds. The new system, with multiple dedicated cores, is a radical departure from the "one size fits all" philosophy, instead of just increasing the number of identical cores.
Comprehensive solution to cloud AI with Gaudi3 In addition to the new NPU co-processor, Intel also announced the successor to the Gaudi2 deep learning AI accelerator. Gaudi3 AI accelerator targets cloud computing, large-scale deep learning and generative AI systems. Intel claims that Gaudi3 provides a 4x increase in BF16 performance compared to Gaudi2.
The BF16 (Brain Floating Point) number format is used to improve floating point performance in AI computing. It is a 16-bit variant of the IEEE 754 float32 format. BF16 retains the 8 exponent bits of standard float32, but only retains 8 mantissa significand bits instead of the 24 bits in float32. AI benefits more from the increased speed that comes with using 16-bit math than from the performance penalty from reduced mantissa precision. Gaudi3 will also double network performance and provide 1.5 times the bandwidth of Gaudi2.
Diving into cloud AI, edge AI and large system processing With Xeon server CPUs, workstation/laptop CPUs and Gaudi3 accelerators, Intel has expanded its AI to cover almost all key AI areas. Gaudi3 will find its way into large-scale AI systems. Fifth-generation Xeons will be used in server farms, combining data processing and traditional server activity with accelerated AI capabilities. And Core Ultra mobile and desktop CPUs will bring AI to individual users.
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Infineon launches new CoolMOS S7T with integrated temperature sensor
【Lansheng Technology News】In order to improve the accuracy of junction temperature sensing, Infineon Technologies has launched a new CoolMOS™ S7T product series with integrated temperature sensor. Integrating this family of semiconductor products into systems can improve the durability, safety and efficiency of many electronic applications. CoolMOS™ S7T features excellent on-resistance and high-precision embedded sensors, making it ideal for improving the performance and reliability of solid-state relay applications.
SSR is a basic configuration of various electronic devices, and if the sensor and super-junction MOSFET can be integrated into the same package, customers can gain many benefits. Infineon's innovative solutions improve the performance of relays and enable them to operate reliably even under overload conditions. The integrated temperature sensor provides up to 40% better accuracy and 10x faster response time than a standard stand-alone on-board sensor at the drain, and has higher reliability because the monitoring process can be performed independently within a multi-device system. reliability.
CoolMOS™ S7T optimizes the use of power transistors, thereby improving output stage performance and achieving precise control. It reduces total power dissipation by up to twice that of electromechanical relays and is more than five times more efficient than current solid-state triac solutions. Increased efficiency and the ability to handle higher loads help reduce power consumption and energy costs.
Unique output stage performance coupled with significant overcurrent thresholds increases relay reliability, minimizing the risk of faults and shutdowns. This robust switching solution also increases operational safety. With greater robustness, MOSFETs can extend the service life of relays and reduce the frequency of replacement. All these advantages ultimately translate into lower maintenance costs.
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Analog chip giant begins layoffs
【Lansheng Technology News】According to official notices submitted to the California Employment Development Department, the latest round of layoffs disclosed by technology companies such as Analog Devices , ForgeRock, Nextdoor and Flex will eliminate 350 jobs.
Among them, ADI is laying off 111 employees at its Rio Robles office building in northern San Jose. The layoffs are expected to take effect on January 12, 2024.
According to the fourth fiscal quarter report released by major analog IC manufacturer ADI on November 21, due to the still high semiconductor inventory, revenue decreased by 16% year-on-year to US$2.72 billion, but slightly higher than the US$2.7 billion expected by FactSet survey. Among them, only automotive revenue grew positively, up 14% year-on-year to US$730 million, and automotive revenue accounted for 27% of the overall revenue. Industrial revenue accounts for about 50% and is the largest source of revenue, but revenue in the fourth quarter fell 20% year-on-year to US$1.35 billion.
Looking at the full year of fiscal 2023, ADI's revenue was US$12.3 billion, an increase of 2% from the previous year, driven by new records in the industrial and automotive fields. The company's gross profit margin increased 5% to US$7.9 billion, and its gross profit margin reached 64%. Operating income increased significantly by 17% to $3.8 billion, and operating profit margin reached 31.1%.
In addition to ADI, EDD documents show that hyperlocal social networking service company Nextdoor will lay off 99 jobs in San Francisco, identity and access management software company ForgeRock will lay off 109 positions in San Francisco, and electronics specialty manufacturing services company Flextronics (Flex) is laying off 99 jobs in Milpi, California. Tas is cutting 31 positions.
In the nearly two years starting in January 2022, technology companies (including the latest disclosed layoffs) have cut more than 31,900 jobs in the San Francisco Bay Area, according to the agency's compilation and analysis of hundreds of EDD letters.
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STMicroelectronics’ new 200W and 500W devices enhance performance and value of MasterGaN series
【Lansheng Technology News】STMicroelectronics’ MasterGaN1L and MasterGaN4L gallium nitride series products have launched the next generation of integrated gallium nitride (GaN) bridge chips, which use wide bandgap semiconductor technology to simplify power supply design and achieve the latest ecological design goals.
STMicroelectronics' MasterGaN product family combines two 650V high electron mobility GaN transistors (HEMTs) with optimized gate drivers, system protection features, and an integrated bootstrap diode to power the device at startup. Integrating these features eliminates the need for designers to deal with GaN transistor gate drive development challenges. Both products feature compact power packages that improve reliability, reduce bill of materials costs, and simplify circuit layout.
The two new devices contain two GaN HEMT transistors connected as a half-bridge, a configuration suitable for developing switches using active-clamped flyback converters, active-clamped forward converters, or resonant converter topologies. power supplies, adapters and chargers. MasterGaN1L and MasterGaN4L are pin-compatible with MasterGaN1 and MasterGaN3 respectively. Compared with earlier products, the new product has re-optimized the conduction time, supports higher switching frequency, and achieves higher energy efficiency under low load conditions. The improvement in energy efficiency is especially obvious in the resonant topology.
The input pins accept signal voltages from 3.3V to 15V, and input hysteresis and pull-down resistors facilitate direct connection of the inputs to a controller, such as a microcontroller, DSP signal processor, or Hall-effect sensor. A dedicated shutdown pin helps designers save system power. The timing of the two GaN HEMT transistors is accurately matched, and an interlock protection circuit is integrated to prevent the switch tubes on the bridge arm from being cross-conducted.
The MasterGaN1L HEMT has an on-resistance RDS(on) of 150mΩ and a rated current of 10A, making it suitable for applications with a maximum power of 500W. No-load power consumption is only 20mW, supporting high conversion efficiency, allowing designers to meet the industry's strict standby power consumption and average energy efficiency goals. MasterGaN4L HEMT is positioned for applications with a maximum power of 200W, with an on-resistance RDS(on) of 225mΩ and a rated current of 6.5A.
The EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards are now available to help developers evaluate the capabilities of each product. These two boards integrate a GaN half-bridge power module optimized for LLC applications, allowing developers to quickly create new topologies using MasterGaN1L and MasterGaN4L devices without using a complete PCB design.
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A single-chip UWB IC brings new possibilities to automotive ultra-wideband applications
【Lansheng Technology News】What will the next generation of automotive UWB solutions look like? You will definitely be able to find the answer from NXP’s newly launched Trimension™ NCJ29D6 ultra-wideband IC. This fully integrated automotive single-chip UWB family combines next-generation secure and precise real-time positioning capabilities with short-range radar capabilities to address multiple use cases with a single system, including secure car access, child presence detection, intrusion alerts, gesture recognition and more.
NXP’s Trimension™ NCJ29D6 is a fully integrated single-chip pulse wireless ultra-wideband low-energy transceiver IC that complies with IEEE802.15.4 HRP UWB PHY and IEEE802.15.4z BPRF/HPRF UWB PHY standards. It is designed for safe ranging and radar applications in automotive environments.
This new automotive UWB IC family includes two products:
◆ NCJ29D6B: This is the next generation UWB device for secure car access control, providing enhanced ranging performance, lower system cost, higher security and one-stop software.
◆ NCJ29D6A: This is the industry's first automotive device that combines ranging and short-range UWB radar functions into a single chip and uses an integrated MCU.
Obviously, the launch of Trimension™ NCJ29D6 can help developers create more innovative automotive UWB use cases, which also means that OEM manufacturers can use a single UWB IC to meet diverse application needs, such as child legacy detection (CPD), intrusion Alarms, seat belt reminders, digital keys, smart car access control systems, live body detection (LOD), kick sensor systems (used to open the trunk), etc.
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Nexperia launches GaN FETs in compact SMD package CCPAK for industrial and renewable energy applications
【Lansheng Technology News】Nexperia today announced new GaN FET devices that feature next-generation high-voltage GaN HEMT technology and a proprietary copper clip CCPAK surface mount package, providing designers with more options for industrial and renewable energy applications. GAN039-650NTB is a 33 mΩ (typ.) gallium nitride field effect transistor that uses CCPAK1212i top heat dissipation packaging technology, creating a new era of combining wide bandgap semiconductors and copper clip packaging.
This technology brings numerous advantages to renewable energy applications such as solar and domestic heat pumps, further strengthening Nexperia's commitment to developing cutting-edge device technologies for sustainable applications. The technology is also suitable for a wide range of industrial applications such as servo drives, switch-mode power supplies (SMPS), servers and telecommunications applications.
Nexperia's innovative CCPAK packaging uses Nexperia's proven copper clip packaging technology, eliminating the need for internal wire bonds, which reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. To maximize design flexibility, CCPAK GaN FETs are available in top or bottom thermal configurations to further improve thermal performance.
The GAN039-650NTB's cascade configuration enables it to provide excellent switching and conduction performance, and its robust and reliable gate structure provides high noise margin. This feature also helps simplify application design, eliminating the need for complex gate drivers and control circuits. These devices can be easily driven using standard silicon MOSFET drivers. Nexperia's GaN technology improves switching stability and helps reduce die size by approximately 24%. In addition, the device's RDS(on) is only 33 mΩ (typ) at 25°C, while it has a high gate threshold voltage and a low equivalent body diode conduction voltage drop.
Nexperia continues to expand its CCPAK product portfolio, currently launching a top-cooled 33 mΩ (typ), 650 V GAN039-650NTB, and soon a bottom-cooled version GAN039-650NBB with the same RDS(on).
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Toshiba and ROHM to cooperate in the production of power semiconductors
【Lansheng Technology News】Japan's Toshiba Group and electrical components company ROHM will collaborate on power semiconductor business. The two companies have spent a combined 380 billion yen to expand their power semiconductor production, with Japan's Ministry of Economy, Trade and Industry expected to bear costs of up to about 130 billion yen. Power semiconductors are capable of handling high voltages and currents and are commonly used in electric vehicles.
The cooperation between Toshiba and ROHM will involve the construction of new factories in Ishikawa and Miyazaki prefectures respectively. A consortium led by Japan Industrial Partners Co., Ltd. acquired 78.65% of Toshiba, which will delist this month. Luomen is part of the consortium.
Global demand for power semiconductors is expected to grow, with Rohm and Toshiba being among the major suppliers. The global power semiconductor market is expected to grow fivefold from about 2.7 trillion yen in 2022 to about 13.4 trillion yen in 2035, according to research firm Fuji Keizai Co.
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Lattice and NVIDIA collaborate to accelerate edge AI
【Lansheng Technology News】Today at the Lattice Developer Conference, Lattice Semiconductor announced the launch of a new sensor bridge reference design to accelerate the development of network edge AI applications for NVIDIA Jetson Orin and IGX Orin platforms.
This open source reference development board is based on low-power Lattice FPGAs and the NVIDIA Orin platform and is designed to meet the needs of developers designing high-performance network edge AI applications in healthcare, robotics and embedded vision, including Interconnection of various sensors and interfaces, design scalability, low latency, etc. The collaboration between Lattice and NVIDIA aims to promote the development of the open source developer community by improving the connection of sensors to edge AI computing applications.
Esam Elashmawi, chief strategy and marketing officer of Lattice Semiconductor, said: Artificial intelligence has become a cutting-edge technology transforming various markets such as manufacturing, transportation, communications and medical devices, and this cooperation will accelerate this transformation. We are excited to work with NVIDIA to expand the application scope of our solutions, bring more innovation to our customers and ecosystem, and simplify and accelerate the implementation of AI applications at the network edge.
Amit Goel, director of embedded AI product management at NVIDIA, said: As companies increasingly demand AI real-time insights and autonomous decision-making capabilities, developers need to connect their various sensors to NVIDIA's edge computing platform. This collaboration with Lattice will accelerate innovation in sensor processing and help simplify the deployment of AI applications from the edge of the network to the cloud.
This Lattice FPGA-based reference development board is now available to early access customers. Lattice plans to make development boards and application examples available to the market in the first half of 2024.
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STMicroelectronics transmitter and receiver evaluation boards accelerate Qi wireless charger development
【Lansheng Technology News】On December 6, 2023, STMicroelectronics launched a wireless charging transmitter and receiver evaluation board based on STWLC38 and STWBC86 chips to simplify the development of 15W Qi wireless chargers.
The STEVAL-WLC38RX board is equipped with the STWLC38 5W/15W receiver chip, and the STEVAL-WBC86TX board is equipped with the STWBC86 5W transmitter chip, which helps developers quickly develop and test wireless charger prototypes. Both boards support the STSW-WPSTUDIO graphics software environment to assist in charger development.
STWLC38 receiver chip supports Qi 1.3 Extended Power Profile (EPP) 15W charging protocol and Baseline Power Profile (BPP) 5W charging protocol. Therefore, this receiver chip can also be used as a 5W transmitter in a wireless charger and has a reverse power transmission function to charge the device. This chip integrates a synchronous rectifier and a low dropout (LDO) linear regulator, which can convert the power of the receiving coil into an adjustable DC output voltage of 4V-12V, with a power transmission efficiency of 85%. STMicroelectronics' Adaptive Rectifier Configuration (ARC) mode maximizes the effective charging area, extends the typical detection range of the receiver by 50%, and increases the freedom of device spatial positioning for the most efficient power transfer.
This 5W transmitter chip STWBC86 that complies with the Qi 1.2.4 BPP protocol integrates a high-energy-efficiency, low-impedance full-bridge inverter and driver to ensure that the receiver chip has very low power dissipation and minimizes the bill of materials cost. By adjusting the applied PWM frequency and duty cycle, the chip is able to control the power delivered by the transmitter coil.
Both chips support wide-voltage inputs, simplifying integration with consumer and industrial products. Each chip uses an Arm® Cortex®-M0+ digital core to dynamically manage charging power for optimal energy efficiency. On-chip integrated non-volatile memory (NVM) can host advanced functions and upgrade charging protocols through firmware updates.
Both chips come in tiny chip-scale packages, making them suitable for very compact applications. The STWLC38 wireless charging receiver chip comes in a 2.12mm x 3.32mm WLCSP40 package, while the STWBC86 transmitter comes in a 3.26mm x 3.67mm WLCSP72 package. Both chips have built-in thermal management and electrical protection features.
Both evaluation boards accelerate the development of transmitter and receiver chip-based solutions for a variety of consumer, medical and industrial applications including smartphones, tablets, smartwatches, wearables, personal medical devices, Drug delivery devices, portable ultrasound equipment, toothbrushes, razors, computer peripherals, hearing aids, charging cases, power tools and mobile robots.
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Intel Emerald Rapids Xeon Processor Die Shot Charts and Performance Metrics Revealed
【Lansheng Technology News】Intel plans to launch its 5th generation Xeon processors, codenamed Emerald Rapids, on December 14, using the same socket and platform as Sapphire Rapids.
The Emerald Rapids processor is equipped with a Raptor Cove core and can package up to 64 cores at a time; the difference from Sapphire Rapids is the tile structure, Emerald Rapids has 2 tiles; while Sapphire Rapids has 4 tiles.
In terms of CPU layout, 2 cores are connected to the cache array through Modular Die Fabric, with a total of 4 memory controllers, supporting up to 8-channel DDR5-5600 memory.
In addition, there are 6 PCIe controllers between the two dies, as well as 4 UPI channels and 4 accelerator engines.
Emerald Rapids has significantly improved the cache structure. Intel's L3 cache capacity has increased from a maximum of 112.5MB to a maximum of 448MB. Additionally, 2MB of L2 cache is reserved for each core.
In order to get clear differences between the 4th generation Xeon and 5th generation Xeon products, Intel compared the two series of flagships.
That includes the Sapphire Rapids-based 8480+, which has 56 cores, and the 8592+, which has 64 cores and more L3 cache.
Across various benchmarks, Intel does promise significant leaps in performance.
Scheduled to launch in 2024, Granite Rapids will be built using the Intel 3 (3nm level) process Redwood Cove P-core and is expected to come with 88 cores for the SP variant and 132 cores for the AP variant.
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South Korea's major wafer foundry accelerates third-generation semiconductor layout
【Lansheng Technology News】Recently, DB HiTek, a major Korean foundry, hired a power semiconductor expert from ON Semiconductor.
Recently, there has been constant news about Eastern Hi-tech's efforts to increase R&D and production of SiC and GaN. From announcing its entry into this field, purchasing core equipment, and introducing relevant talents, we can see its determination to enter the third-generation semiconductor field.
Dongbu Hi-Tech is not the only Korean company that wants to flex its muscles in the third-generation semiconductor field. Samsung has also previously accelerated its third-generation semiconductor foundry business by purchasing SiC/GaN equipment and hiring external experts with rich experience.
According to TrendForce consulting data, the top five market shares of major SiC power semiconductor manufacturers in 2022 are STMicroelectronics (36.5%), Infineon (17.9%), Wolfspeed (16.3%), and ON Semiconductor (11.6%) ), ROHM (8.1%), and the remaining manufacturers accounted for only 9.6%.
Against this background, in recent years, the Korean government has attached great importance to the development of the third-generation semiconductor industry and formulated a series of policies and plans to promote industrial innovation. For example, the South Korean government plans to invest billions of dollars in the semiconductor industry over the next few years to support research and development and expand production capacity.
Nowadays, many Korean companies have realized the huge market for third-generation semiconductors and have begun to intend to strengthen the construction and upgrading of the SiC/GaN industry. Major Korean semiconductor companies, such as Samsung and LX Semicon, are actively investing in third-generation semiconductor technology. These companies not only invest heavily in research and development, but also seek cooperation and acquisitions globally to accelerate technological progress and market expansion.
In addition, South Korea also has internationally renowned car companies such as Hyundai, Kia, and General Motors. As the world's cars develop toward electric cars, the third-generation automotive power semiconductors represented by SiC have broad room for development.
In addition to Dongbu Hi-tech and Samsung, there are also some Korean companies related to the third-generation semiconductor industry that have a certain international reputation: SK Siltron and Scenic, which produce substrates; STI, which manufactures SiC crystal growth equipment; and TRinno Technology, which produces power devices. Yes Power Technics (now renamed "SK Powertech").
Korean companies have recently continued to increase their investment in the field of SiC/GaN power semiconductors, hoping to get a share of the third-generation semiconductor market. However, it will take time to verify whether these companies can have a place in the international market with many strong players.
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Infineon launches new 62 mm package CoolSiC product portfolio to help achieve higher efficiency and power density
【Lansheng Technology News】Infineon Technologies AG recently announced the addition of new industry-standard packaging products to its CoolSiC 1200 V and 2000 V MOSFET module series. It uses a mature 62 mm device half-bridge topology design and is based on the newly launched enhancement-mode M1H silicon carbide (SiC) MOSFET technology. This package enables SiC to be used in mid-power applications above 250 kW, where the power density of traditional IGBT silicon technology has reached its limit. Compared with traditional 62mm IGBT modules, its application scope has now expanded to solar energy, servers, energy storage, electric vehicle charging piles, traction, commercial induction cookers and power conversion systems.
Enhanced M1H technology can significantly widen the gate voltage window, even at high switching frequencies, without any restrictions, ensuring high gate reliability against induced voltage spikes caused by drivers and layout. Additionally, extremely low switching and transmission losses minimize cooling requirements. Combined with high reverse voltage, these semiconductor devices also meet another requirement of modern system design. With Infineon's CoolSiCTM chip technology, the converter design can become more efficient and the power rating of a single inverter can be further increased, thereby reducing the overall system cost.
Featuring a copper base plate and threaded interface, the package features a highly robust mechanical design that increases system availability, lowers service costs and reduces downtime costs. Excellent reliability is achieved through strong thermal cycling capabilities and a continuous operating junction temperature (Tvjop) of 150°C. Its symmetrical internal package design enables the upper and lower switches to have the same switching conditions. Optional pre-applied thermal interface material (TIM) is available to further enhance the module’s thermal performance.
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